BAS116QAZ
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
DIODE GP 75V 300MA DFN1010D-3
DIODE GP 75V 300MA DFN1010D-3
Detailed specification
Detailed specification
Diode 75 V 300mA surface-mounted DFN1010D-3
Diode 75 V 300mA surface-mounted DFN1010D-3
Description
Description
The BAS116QAZ is a low-leakage switching diode with a maximum repetitive peak reverse voltage of 85 V and a forward current rating of 300 mA. It features a fast reverse recovery time of 0.8 µs and low leakage current of 3 pA. Encapsulated in a compact DFN1010D-3 package, it is suitable for high-density applications and Automatic Optical Inspection (AOI).
The BAS116QAZ is a low-leakage switching diode with a maximum repetitive peak reverse voltage of 85 V and a forward current rating of 300 mA. It features a fast reverse recovery time of 0.8 µs and low leakage current of 3 pA. Encapsulated in a compact DFN1010D-3 package, it is suitable for high-density applications and Automatic Optical Inspection (AOI).
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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