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BAS116GWJ

Manufacturer

NEXPERIA

data-sheet
Data sheet
Data sheet
BAS116GWJ is designed for low-leakage current applications and general-purpose switching in various domains including automotive and consumer electronics. Its high switching speed and low capacitance make it ideal for use in circuits requiring efficient performance and reliability.
Specification
Specification
DIODE GEN PURP 75V 215MA SOD123
DIODE GEN PURP 75V 215MA SOD123
Detailed specification
Detailed specification
Diode 75 V 215mA surface-mounted SOD-123
Diode 75 V 215mA surface-mounted SOD-123
Description
Description
The BAS116GWJ is a low leakage switching diode with a maximum repetitive peak reverse voltage of 85 V and a forward current rating of 215 mA. It features a fast reverse recovery time of 0.8 µs and low leakage current of 3 pA, encapsulated in a compact SOD-123 surface mount package. This diode is suitable for general-purpose switching applications.
The BAS116GWJ is a low leakage switching diode with a maximum repetitive peak reverse voltage of 85 V and a forward current rating of 215 mA. It features a fast reverse recovery time of 0.8 µs and low leakage current of 3 pA, encapsulated in a compact SOD-123 surface mount package. This diode is suitable for general-purpose switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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