BAS116,235
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
DIODE GEN PURP 75V 215MA TO236AB
DIODE GEN PURP 75V 215MA TO236AB
Detailed specification
Detailed specification
Diode 75 V 215mA surface-mounted TO-236AB
Diode 75 V 215mA surface-mounted TO-236AB
Description
Description
The BAS116 is a low-leakage epitaxial medium-speed switching diode designed for surface-mounted applications. It features a maximum continuous reverse voltage of 75 V, a forward current rating of 215 mA, and a low leakage current of typ. 3 pA. The diode is housed in a compact TO-236AB (SOT23) package, making it suitable for space-constrained designs.
The BAS116 is a low-leakage epitaxial medium-speed switching diode designed for surface-mounted applications. It features a maximum continuous reverse voltage of 75 V, a forward current rating of 215 mA, and a low leakage current of typ. 3 pA. The diode is housed in a compact TO-236AB (SOT23) package, making it suitable for space-constrained designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Christian or one of our other skilled sales representatives. They'll help you find the right service option.C