BAS116,215
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
DIODE GEN PURP 75V 215MA TO236AB
DIODE GEN PURP 75V 215MA TO236AB
Detailed specification
Detailed specification
Diode 75 V 215mA surface-mounted TO-236AB
Diode 75 V 215mA surface-mounted TO-236AB
Description
Description
The BAS116 is a low-leakage epitaxial medium-speed switching diode designed for surface-mounted applications. It features a maximum continuous reverse voltage of 75 V, a forward current rating of 215 mA, and a low leakage current of typ. 3 pA. The diode is housed in a compact TO-236AB package, making it suitable for space-constrained designs.
The BAS116 is a low-leakage epitaxial medium-speed switching diode designed for surface-mounted applications. It features a maximum continuous reverse voltage of 75 V, a forward current rating of 215 mA, and a low leakage current of typ. 3 pA. The diode is housed in a compact TO-236AB package, making it suitable for space-constrained designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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