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BAS116,215

Manufacturer

NEXPERIA

data-sheet
Data sheet
Data sheet
BAS116 is ideal for low leakage current applications in surface-mounted circuits, particularly in consumer electronics and automotive sectors where reliability and compactness are critical. Its low leakage and medium-speed switching capabilities make it suitable for various electronic devices requiring efficient power management.
Specification
Specification
DIODE GEN PURP 75V 215MA TO236AB
DIODE GEN PURP 75V 215MA TO236AB
Detailed specification
Detailed specification
Diode 75 V 215mA surface-mounted TO-236AB
Diode 75 V 215mA surface-mounted TO-236AB
Description
Description
The BAS116 is a low-leakage epitaxial medium-speed switching diode designed for surface-mounted applications. It features a maximum continuous reverse voltage of 75 V, a forward current rating of 215 mA, and a low leakage current of typ. 3 pA. The diode is housed in a compact TO-236AB package, making it suitable for space-constrained designs.
The BAS116 is a low-leakage epitaxial medium-speed switching diode designed for surface-mounted applications. It features a maximum continuous reverse voltage of 75 V, a forward current rating of 215 mA, and a low leakage current of typ. 3 pA. The diode is housed in a compact TO-236AB package, making it suitable for space-constrained designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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