BAR9002ELE6327XTMA1
Manufacturer
INFINEON
Data sheet
Data sheet
Specification
Specification
RF DIODE PIN 80V 250MW TSLP-2-19
RF DIODE PIN 80V 250MW TSLP-2-19
Detailed specification
Detailed specification
RF Diode PIN - Single 80V 100 mA 250 mW PG-TSLP-2-19
RF Diode PIN - Single 80V 100 mA 250 mW PG-TSLP-2-19
Description
Description
The Infineon BAR9002ELE6327XTMA1 is a single silicon RF PIN diode designed for high-voltage applications. It features a breakdown voltage of 80V, a forward current of 100 mA, and a power dissipation of 250 mW. With a low capacitance of 0.23 pF and a low forward resistance of 1.6 Ω, it minimizes loss and distortion, making it ideal for compact designs. The device is housed in a TSLP-2-19 package measuring 1 mm x 0.6 mm x 0.31 mm, suitable for various RF applications.
The Infineon BAR9002ELE6327XTMA1 is a single silicon RF PIN diode designed for high-voltage applications. It features a breakdown voltage of 80V, a forward current of 100 mA, and a power dissipation of 250 mW. With a low capacitance of 0.23 pF and a low forward resistance of 1.6 Ω, it minimizes loss and distortion, making it ideal for compact designs. The device is housed in a TSLP-2-19 package measuring 1 mm x 0.6 mm x 0.31 mm, suitable for various RF applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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