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BAP70-05,215

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
BAP70-05 is designed for RF applications, particularly in RF attenuators and switches. Its high voltage capability, low diode capacitance, and low series inductance make it ideal for use in telecommunications and industrial electronics, where reliable performance in high-frequency circuits is essential.
Specification
Specification
RF DIODE PIN 50V 250MW TO236AB
RF DIODE PIN 50V 250MW TO236AB
Detailed specification
Detailed specification
RF Diode PIN - 1 Pair Common Cathode 50V 100 mA 250 mW SOT-23 (TO-236AB)
RF Diode PIN - 1 Pair Common Cathode 50V 100 mA 250 mW SOT-23 (TO-236AB)
Description
Description
The BAP70-05 is a silicon PIN diode configured in a common cathode arrangement, housed in a SOT-23 (TO-236AB) surface-mounted package. It supports a reverse voltage of 50V, forward current of 100mA, and total power dissipation of 250mW. This device features low capacitance and series inductance, making it suitable for RF applications.
The BAP70-05 is a silicon PIN diode configured in a common cathode arrangement, housed in a SOT-23 (TO-236AB) surface-mounted package. It supports a reverse voltage of 50V, forward current of 100mA, and total power dissipation of 250mW. This device features low capacitance and series inductance, making it suitable for RF applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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