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BAP65-03,115

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
BAP65-03 is utilized in RF applications, including RF attenuators, switches, and bandswitches for TV tuners. Its low capacitance and resistance characteristics make it ideal for mobile communication transmit/receive switches, ensuring efficient signal management in telecommunications.
Specification
Specification
RF DIODE PIN 30V 500MW SOD323
RF DIODE PIN 30V 500MW SOD323
Detailed specification
Detailed specification
RF Diode PIN - Single 30V 100 mA 500 mW SOD-323
RF Diode PIN - Single 30V 100 mA 500 mW SOD-323
Description
Description
The BAP65-03 is a silicon PIN diode designed for RF applications, featuring a maximum reverse voltage of 30V and a forward current of 100 mA. It offers low capacitance and forward resistance, making it suitable for RF switches and attenuators. Packaged in a SOD323 surface-mounted configuration, it supports high-frequency operations with minimal series inductance.
The BAP65-03 is a silicon PIN diode designed for RF applications, featuring a maximum reverse voltage of 30V and a forward current of 100 mA. It offers low capacitance and forward resistance, making it suitable for RF switches and attenuators. Packaged in a SOD323 surface-mounted configuration, it supports high-frequency operations with minimal series inductance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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