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BAP65-02,135

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
BAP65-02 is utilized in RF applications, particularly in RF attenuators and switches, bandswitching for TV tuners, and as a series diode in mobile communication transmit/receive switches. Its high voltage and low capacitance characteristics make it ideal for telecommunications and consumer electronics.
Specification
Specification
RF DIODE PIN 30V 715MW SOD523
RF DIODE PIN 30V 715MW SOD523
Detailed specification
Detailed specification
RF Diode PIN - Single 30V 100 mA 715 mW SOD-523
RF Diode PIN - Single 30V 100 mA 715 mW SOD-523
Description
Description
The BAP65-02 is a silicon PIN diode designed for RF applications, featuring a maximum reverse voltage of 30V and a forward current of 100 mA. It offers low forward resistance, low capacitance, and very low series inductance, making it suitable for RF switches and attenuators. Packaged in a SOD523 surface-mounted configuration, it supports a total power dissipation of 715 mW.
The BAP65-02 is a silicon PIN diode designed for RF applications, featuring a maximum reverse voltage of 30V and a forward current of 100 mA. It offers low forward resistance, low capacitance, and very low series inductance, making it suitable for RF switches and attenuators. Packaged in a SOD523 surface-mounted configuration, it supports a total power dissipation of 715 mW.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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