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BAP64-05W,135

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
BAP64-05W is utilized in RF applications, particularly in RF attenuators and switches. Its high voltage and low capacitance characteristics make it ideal for telecommunications and industrial applications, ensuring reliable performance in high-frequency environments.
Specification
Specification
RF DIODE PIN 100V 240MW SOT323-3
RF DIODE PIN 100V 240MW SOT323-3
Detailed specification
Detailed specification
RF Diode PIN - 1 Pair Common Cathode 100V 100 mA 240 mW SC-70
RF Diode PIN - 1 Pair Common Cathode 100V 100 mA 240 mW SC-70
Description
Description
The BAP64-05W is a silicon PIN diode designed for RF applications, featuring a common cathode configuration in a SOT323 package. It supports a reverse voltage of 100V, forward current of 100mA, and total power dissipation of 240mW. This diode exhibits low capacitance and forward resistance, making it suitable for RF attenuators and switches up to 3 GHz.
The BAP64-05W is a silicon PIN diode designed for RF applications, featuring a common cathode configuration in a SOT323 package. It supports a reverse voltage of 100V, forward current of 100mA, and total power dissipation of 240mW. This diode exhibits low capacitance and forward resistance, making it suitable for RF attenuators and switches up to 3 GHz.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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