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BAP64-03,115

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
BAP64-03 is utilized in RF applications, particularly in RF attenuators and switches. Its high voltage and low capacitance characteristics make it ideal for telecommunications and industrial RF systems, ensuring efficient signal management and control in high-frequency environments.
Specification
Specification
RF DIODE PIN 175V 500MW SOD323
RF DIODE PIN 175V 500MW SOD323
Detailed specification
Detailed specification
RF Diode PIN - Single 175V 100 mA 500 mW SOD-323
RF Diode PIN - Single 175V 100 mA 500 mW SOD-323
Description
Description
The BAP64-03 is a silicon PIN diode designed for RF applications, featuring a maximum reverse voltage of 175V and a forward current of 100mA. It offers low capacitance (0.23 to 0.48 pF) and low forward resistance (0.7 to 1.35 Ω), making it suitable for RF attenuators and switches up to 3 GHz. Packaged in a compact SOD-323 surface-mounted configuration, it supports total power dissipation of 500mW.
The BAP64-03 is a silicon PIN diode designed for RF applications, featuring a maximum reverse voltage of 175V and a forward current of 100mA. It offers low capacitance (0.23 to 0.48 pF) and low forward resistance (0.7 to 1.35 Ω), making it suitable for RF attenuators and switches up to 3 GHz. Packaged in a compact SOD-323 surface-mounted configuration, it supports total power dissipation of 500mW.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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