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BAP55LX,315

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
BAP55LX is suitable for RF applications, including RF attenuators and switches. Its high-speed switching capability, low forward resistance, and low series inductance make it ideal for use in telecommunications and industrial RF systems, operating effectively up to 3 GHz.
Specification
Specification
RF DIODE PIN 50V 135MW 2DFN
RF DIODE PIN 50V 135MW 2DFN
Detailed specification
Detailed specification
RF Diode PIN - Single 50V 100 mA 135 mW DFN1006D-2
RF Diode PIN - Single 50V 100 mA 135 mW DFN1006D-2
Description
Description
The BAP55LX is a silicon PIN diode designed for RF applications, featuring a maximum reverse voltage of 50V and a forward current of 100mA. It operates with low capacitance and resistance, ensuring high-speed switching for RF signals up to 3 GHz. Packaged in a DFN1006D-2 leadless ultra-small plastic SMD package, it offers excellent thermal performance with a total power dissipation of 135mW.
The BAP55LX is a silicon PIN diode designed for RF applications, featuring a maximum reverse voltage of 50V and a forward current of 100mA. It operates with low capacitance and resistance, ensuring high-speed switching for RF signals up to 3 GHz. Packaged in a DFN1006D-2 leadless ultra-small plastic SMD package, it offers excellent thermal performance with a total power dissipation of 135mW.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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