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BAP51-03,115

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
BAP51-03 is suitable for general RF applications, including telecommunications, automotive, and consumer electronics. Its low capacitance and resistance make it ideal for high-frequency signal processing, ensuring efficient performance in various electronic circuits.
Specification
Specification
RF DIODE PIN 50V 500MW SOD323
RF DIODE PIN 50V 500MW SOD323
Detailed specification
Detailed specification
RF Diode PIN - Single 50V 50 mA 500 mW SOD-323
RF Diode PIN - Single 50V 50 mA 500 mW SOD-323
Description
Description
The BAP51-03 is a silicon PIN diode designed for general RF applications. It features a maximum reverse voltage of 50V, continuous forward current of 50mA, and total power dissipation of 500mW. The diode exhibits low capacitance (max. 1.05 pF) and low forward resistance (max. 0.7 Ω), making it suitable for high-frequency applications. Packaged in a compact SOD-323 surface-mounted configuration, it is AEC-Q101 qualified for automotive use.
The BAP51-03 is a silicon PIN diode designed for general RF applications. It features a maximum reverse voltage of 50V, continuous forward current of 50mA, and total power dissipation of 500mW. The diode exhibits low capacitance (max. 1.05 pF) and low forward resistance (max. 0.7 Ω), making it suitable for high-frequency applications. Packaged in a compact SOD-323 surface-mounted configuration, it is AEC-Q101 qualified for automotive use.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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