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BAP51-02,115

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
BAP51-02, suitable for general RF applications including telecommunications, consumer electronics, and industrial RF systems. Its low capacitance and forward resistance enhance performance in RF signal processing, making it ideal for use in RF switches, attenuators, and other RF components.
Specification
Specification
RF DIODE PIN 60V 715MW SOD523
RF DIODE PIN 60V 715MW SOD523
Detailed specification
Detailed specification
RF Diode PIN - Single 60V 50 mA 715 mW SOD-523
RF Diode PIN - Single 60V 50 mA 715 mW SOD-523
Description
Description
The BAP51-02 is a silicon PIN diode designed for general RF applications. It features a maximum reverse voltage of 60V, continuous forward current of 50mA, and total power dissipation of 715mW. Packaged in an ultra-small SOD523 surface-mounted device, it offers low diode capacitance and forward resistance, making it suitable for various RF circuits.
The BAP51-02 is a silicon PIN diode designed for general RF applications. It features a maximum reverse voltage of 60V, continuous forward current of 50mA, and total power dissipation of 715mW. Packaged in an ultra-small SOD523 surface-mounted device, it offers low diode capacitance and forward resistance, making it suitable for various RF circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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