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AFT09MP055GNR1

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
AFT09MP055GNR1 is utilized in mobile radio equipment, specifically in the output stage of 700 MHz and 800 MHz band mobile radios. Its high linearity and exceptional thermal performance make it ideal for demanding RF applications in telecommunications.
Specification
Specification
RF MOSFET LDMOS 12.5V TO270-4
RF MOSFET LDMOS 12.5V TO270-4
Detailed specification
Detailed specification
RF Mosfet 12.5 V 550 mA 870MHz 15.7dB 1W TO-270 WB-4 Gold
RF Mosfet 12.5 V 550 mA 870MHz 15.7dB 1W TO-270 WB-4 Gold
Description
Description
The AFT09MP055GNR1 is a high-performance RF MOSFET LDMOS designed for mobile two-way radio applications, operating at 12.5 V with a maximum output power of 57 W at 870 MHz. It features high gain (15.7 dB), ruggedness, and integrated ESD protection, making it suitable for large-signal amplifier applications in the 764 to 941 MHz frequency range.
The AFT09MP055GNR1 is a high-performance RF MOSFET LDMOS designed for mobile two-way radio applications, operating at 12.5 V with a maximum output power of 57 W at 870 MHz. It features high gain (15.7 dB), ruggedness, and integrated ESD protection, making it suitable for large-signal amplifier applications in the 764 to 941 MHz frequency range.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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