logo

AFT05MS031GNR1

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
AFT05MS031GNR1 is designed for mobile two-way radio applications, particularly in the VHF and UHF frequency ranges. Its high gain and ruggedness make it ideal for large-signal, common source amplifier applications in mobile radio equipment, ensuring reliable performance in industrial and telecommunications sectors.
Specification
Specification
RF MOSFET LDMOS 13.6V TO270-2
RF MOSFET LDMOS 13.6V TO270-2
Detailed specification
Detailed specification
RF Mosfet 13.6 V 10 mA 520MHz 17.7dB 31W TO-270-2 GULL
RF Mosfet 13.6 V 10 mA 520MHz 17.7dB 31W TO-270-2 GULL
Description
Description
The AFT05MS031GNR1 is a high-performance RF MOSFET designed for mobile two-way radio applications, operating at frequencies from 136 to 520 MHz. It features a maximum output power of 31 W, a gain of 17.7 dB, and operates at a voltage of 13.6 V. This N-channel enhancement-mode LDMOS transistor is characterized by high ruggedness and exceptional thermal performance, making it suitable for demanding RF applications.
The AFT05MS031GNR1 is a high-performance RF MOSFET designed for mobile two-way radio applications, operating at frequencies from 136 to 520 MHz. It features a maximum output power of 31 W, a gain of 17.7 dB, and operates at a voltage of 13.6 V. This N-channel enhancement-mode LDMOS transistor is characterized by high ruggedness and exceptional thermal performance, making it suitable for demanding RF applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Lukas or one of our other skilled sales representatives. They'll help you find the right service option.
Lukas Wallin
Upload BOM
Do you want to upload an entire BOM and get a ready-made quote within a few hours? Our salespeople will immediately take care of your request and get back to you.