AFT05MS006NT1
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 7.5V PLD-1.5W
RF MOSFET LDMOS 7.5V PLD-1.5W
Detailed specification
Detailed specification
RF Mosfet 7.5 V 100 mA 520MHz 18.3dB 6W PLD-1.5W
RF Mosfet 7.5 V 100 mA 520MHz 18.3dB 6W PLD-1.5W
Description
Description
The AFT05MS006NT1 is a high ruggedness RF power LDMOS transistor designed for handheld two-way radio applications. It operates at 7.5 V with a maximum output power of 6 W across a frequency range of 136 to 941 MHz. This N-channel enhancement-mode device features high gain, exceptional thermal performance, and integrated ESD protection, making it suitable for large-signal amplifier applications.
The AFT05MS006NT1 is a high ruggedness RF power LDMOS transistor designed for handheld two-way radio applications. It operates at 7.5 V with a maximum output power of 6 W across a frequency range of 136 to 941 MHz. This N-channel enhancement-mode device features high gain, exceptional thermal performance, and integrated ESD protection, making it suitable for large-signal amplifier applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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