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AFM907NT1

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
AFM907NT1 is utilized in the domain of RF power amplification for handheld two-way radios, specifically in VHF and UHF bands. Typical applications include output stages for VHF and UHF handheld radios, as well as for 700-800 MHz handheld radio systems, benefiting from its high gain and ruggedness.
Specification
Specification
RF MOSFET LDMOS 10.8V 16DFN
RF MOSFET LDMOS 10.8V 16DFN
Detailed specification
Detailed specification
RF Mosfet 10.8 V 100 mA 136MHz ~ 941MHz 8.4W 16-DFN (4x6 mm (0.16x0.24 in))
RF Mosfet 10.8 V 100 mA 136MHz ~ 941MHz 8.4W 16-DFN (4x6 mm (0.16x0.24 in))
Description
Description
The AFM907NT1 is a high ruggedness RF MOSFET LDMOS designed for handheld two-way radio applications, operating at 10.8V with a maximum output power of 8.4W across a frequency range of 136 to 941 MHz. It features unmatched input/output for wide frequency utilization, integrated ESD protection, and exceptional thermal performance.
The AFM907NT1 is a high ruggedness RF MOSFET LDMOS designed for handheld two-way radio applications, operating at 10.8V with a maximum output power of 8.4W across a frequency range of 136 to 941 MHz. It features unmatched input/output for wide frequency utilization, integrated ESD protection, and exceptional thermal performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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