AFM906NT1
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 10.8V 16DFN
RF MOSFET LDMOS 10.8V 16DFN
Detailed specification
Detailed specification
RF Mosfet 10.8 V 100 mA 136MHz ~ 941MHz 6.8W 16-DFN (4x6 mm (0.16x0.24 in))
RF Mosfet 10.8 V 100 mA 136MHz ~ 941MHz 6.8W 16-DFN (4x6 mm (0.16x0.24 in))
Description
Description
The AFM906NT1 is a high ruggedness RF MOSFET LDMOS designed for handheld two-way radio applications, operating at frequencies from 136 to 941 MHz. It features a maximum drain-source voltage of 30 Vdc, a gate-source voltage range of -6.0 to +12 Vdc, and delivers up to 6.8 W output power with high efficiency. The device is characterized by exceptional thermal performance and integrated ESD protection, making it suitable for demanding RF applications.
The AFM906NT1 is a high ruggedness RF MOSFET LDMOS designed for handheld two-way radio applications, operating at frequencies from 136 to 941 MHz. It features a maximum drain-source voltage of 30 Vdc, a gate-source voltage range of -6.0 to +12 Vdc, and delivers up to 6.8 W output power with high efficiency. The device is characterized by exceptional thermal performance and integrated ESD protection, making it suitable for demanding RF applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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