A5G35S008NT6
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET
RF MOSFET
Detailed specification
Detailed specification
RF Mosfet with a maximum RDS(on) of 0.1 ohms, a thick film resistor of 10 mm (0.39 inches) in length, 5 mm (0.20 inches) in width, and a power rating that can withstand 2 watts. It features a drum-shaped core and is wire-wound.
RF Mosfet with a maximum RDS(on) of 0.1 ohms, a thick film resistor of 10 mm (0.39 inches) in length, 5 mm (0.20 inches) in width, and a power rating that can withstand 2 watts. It features a drum-shaped core and is wire-wound.
Description
Description
The A5G35S008NT6 is a 27 dBm RF power GaN transistor optimized for cellular base station applications within the 3300 to 3800 MHz frequency range. It features high terminal impedances for broadband performance and is designed for low complexity linearization systems, making it suitable for massive MIMO active antenna systems in 5G networks.
The A5G35S008NT6 is a 27 dBm RF power GaN transistor optimized for cellular base station applications within the 3300 to 3800 MHz frequency range. It features high terminal impedances for broadband performance and is designed for low complexity linearization systems, making it suitable for massive MIMO active antenna systems in 5G networks.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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