A3T23H300W23SR6
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS
RF MOSFET LDMOS
Detailed specification
Detailed specification
RF Mosfet with a surface-mounted design, featuring a RDS(on) of 0.1 ohms, a thick film resistor of 0.5 mm (0.02 inches) in thickness, and a drum-shaped core measuring 5 mm (0.20 inches) in diameter. This component can tolerate a power of 10 watts.
RF Mosfet with a surface-mounted design, featuring a RDS(on) of 0.1 ohms, a thick film resistor of 0.5 mm (0.02 inches) in thickness, and a drum-shaped core measuring 5 mm (0.20 inches) in diameter. This component can tolerate a power of 10 watts.
Description
Description
The A3T23H300W23SR6 is a 63 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within a frequency range of 2300 to 2400 MHz, providing high efficiency and wide instantaneous bandwidth. The device features advanced performance characteristics, including a greater negative gate-source voltage range for improved Class C operation and the ability to withstand high output VSWR.
The A3T23H300W23SR6 is a 63 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within a frequency range of 2300 to 2400 MHz, providing high efficiency and wide instantaneous bandwidth. The device features advanced performance characteristics, including a greater negative gate-source voltage range for improved Class C operation and the ability to withstand high output VSWR.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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