A3T21H456W23SR6
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS
RF MOSFET LDMOS
Detailed specification
Detailed specification
RF Mosfet with a maximum width of 10 mm (0.39 inches) and a height of 5 mm (0.20 inches). It features RDS(on) characteristics and is designed with a thick film resistor (tjockfilmsmotstånd) for durability. The device can tolerate a power rating of 20 watts and includes a drum-shaped core (trumformad kärna) for efficient performance. This component is surface-mounted.
RF Mosfet with a maximum width of 10 mm (0.39 inches) and a height of 5 mm (0.20 inches). It features RDS(on) characteristics and is designed with a thick film resistor (tjockfilmsmotstånd) for durability. The device can tolerate a power rating of 20 watts and includes a drum-shaped core (trumformad kärna) for efficient performance. This component is surface-mounted.
Description
Description
The A3T21H456W23SR6 is an RF power LDMOS transistor designed for cellular base station applications. It operates in the frequency range of 2110 to 2200 MHz, delivering 87 W average output power with high efficiency. This N-channel enhancement-mode lateral MOSFET features advanced Doherty performance, capable of withstanding high output VSWR and broadband conditions, making it suitable for digital predistortion systems.
The A3T21H456W23SR6 is an RF power LDMOS transistor designed for cellular base station applications. It operates in the frequency range of 2110 to 2200 MHz, delivering 87 W average output power with high efficiency. This N-channel enhancement-mode lateral MOSFET features advanced Doherty performance, capable of withstanding high output VSWR and broadband conditions, making it suitable for digital predistortion systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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