A3T18H455W23SR6
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 30V ACP1230S-4
RF MOSFET LDMOS 30V ACP1230S-4
Detailed specification
Detailed specification
RF Mosfet 30 V 600 mA 1.805GHz ~ 1.88GHz 16.7dB 192W ACP-1230S-4L2S
RF Mosfet 30 V 600 mA 1.805GHz ~ 1.88GHz 16.7dB 192W ACP-1230S-4L2S
Description
Description
The A3T18H455W23SR6 is an RF power LDMOS transistor designed for cellular base station applications. It operates at 30V with a maximum output power of 87W, covering a frequency range of 1805 to 1880 MHz. This N-channel enhancement-mode LDMOS transistor features high efficiency and is suitable for digital predistortion systems, with a typical power gain of 16.7 dB and drain efficiency of 54.1%. It is optimized for wide instantaneous bandwidth applications.
The A3T18H455W23SR6 is an RF power LDMOS transistor designed for cellular base station applications. It operates at 30V with a maximum output power of 87W, covering a frequency range of 1805 to 1880 MHz. This N-channel enhancement-mode LDMOS transistor features high efficiency and is suitable for digital predistortion systems, with a typical power gain of 16.7 dB and drain efficiency of 54.1%. It is optimized for wide instantaneous bandwidth applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Lukas or one of our other skilled sales representatives. They'll help you find the right service option.C