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A3T18H400W23SR6

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
A3T18H400W23SR6 is used in RF power amplification for cellular base stations, particularly in W-CDMA applications. Its wide bandwidth and high output power make it suitable for modern telecommunications systems requiring efficient signal processing and transmission.
Specification
Specification
RF MOSFET LDMOS 28V ACP1230S-4
RF MOSFET LDMOS 28V ACP1230S-4
Detailed specification
Detailed specification
RF Mosfet 28 V 300 mA 1.805GHz ~ 1.88GHz 16.8dB 170W ACP-1230S-4L2S
RF Mosfet 28 V 300 mA 1.805GHz ~ 1.88GHz 16.8dB 170W ACP-1230S-4L2S
Description
Description
The A3T18H400W23SR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 28V with a typical output power of 71W and covers a frequency range of 1805 to 1880 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, high efficiency, and robust operation under high VSWR conditions.
The A3T18H400W23SR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 28V with a typical output power of 71W and covers a frequency range of 1805 to 1880 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, high efficiency, and robust operation under high VSWR conditions.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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