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A3T09S100NR1

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
The A3T09S100NR1 is utilized in the telecommunications domain, specifically for two-way radio applications. It is ideal for output stages in VHF, UHF, and 900 MHz base stations and high-performance mobile radios, ensuring robust performance across a wide frequency range.
Specification
Specification
RF MOSFET LDMOS 28V TO270-2
RF MOSFET LDMOS 28V TO270-2
Detailed specification
Detailed specification
RF Mosfet 28 V 450 mA 136MHz ~ 941MHz 22.8dB 100W TO-270-2
RF Mosfet 28 V 450 mA 136MHz ~ 941MHz 22.8dB 100W TO-270-2
Description
Description
The A3T09S100NR1 is an RF MOSFET LDMOS designed for two-way radio applications, operating at 28V with a current of 450 mA. It covers a frequency range of 136 MHz to 941 MHz, providing a power output of 100W and a gain of 22.8 dB. This device features unmatched input/output for wide frequency utilization and integrated ESD protection, making it suitable for high-performance mobile radios and base stations.
The A3T09S100NR1 is an RF MOSFET LDMOS designed for two-way radio applications, operating at 28V with a current of 450 mA. It covers a frequency range of 136 MHz to 941 MHz, providing a power output of 100W and a gain of 22.8 dB. This device features unmatched input/output for wide frequency utilization and integrated ESD protection, making it suitable for high-performance mobile radios and base stations.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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