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Manufacturers/NXP/A3I25D080NR1

A3I25D080NR1

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
A3I25D080N is used in RF power amplification for cellular base stations, supporting various modulation formats. Its integrated Doherty design enhances efficiency and performance in telecommunications applications, particularly in the 2300 to 2690 MHz frequency range.
Specification
Specification
RF MOSFET LDMOS 28V TO270-17
RF MOSFET LDMOS 28V TO270-17
Detailed specification
Detailed specification
RF Mosfet 28 V 175 mA 2.3GHz ~ 2.69GHz 29.2dB 8.3W TO-270WB-17
RF Mosfet 28 V 175 mA 2.3GHz ~ 2.69GHz 29.2dB 8.3W TO-270WB-17
Description
Description
The A3I25D080N is an RF LDMOS power amplifier designed for operation in the 2300 to 2690 MHz frequency range. It operates at 28 V with a quiescent current of 175 mA, delivering an average output power of 8.3 W. The device features integrated Doherty architecture, on-chip matching, and RF decoupled drain pins, making it suitable for cellular base station applications.
The A3I25D080N is an RF LDMOS power amplifier designed for operation in the 2300 to 2690 MHz frequency range. It operates at 28 V with a quiescent current of 175 mA, delivering an average output power of 8.3 W. The device features integrated Doherty architecture, on-chip matching, and RF decoupled drain pins, making it suitable for cellular base station applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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