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A3I20X050NR1

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
A3I20X050N is used in RF amplification applications, particularly in cellular base stations and telecommunications. Its wide frequency range and integrated features make it ideal for modern communication systems requiring efficient power amplification and signal integrity.
Specification
Specification
AIRFAST RF LDMOS WIDEBAND INTEGR
AIRFAST RF LDMOS WIDEBAND INTEGR
Detailed specification
Detailed specification
RF Amplifier IC 1.8GHz ~ 2.2GHz OM-400-8
RF Amplifier IC 1.8GHz ~ 2.2GHz OM-400-8
Description
Description
The A3I20X050N is an RF Amplifier IC designed for wideband applications from 1.8 GHz to 2.2 GHz. It features an integrated Doherty circuit with on-chip matching, enabling operation at 20 to 32 V. The device delivers an average output power of 6.3 W and supports various cellular base station modulation formats, making it suitable for modern communication systems.
The A3I20X050N is an RF Amplifier IC designed for wideband applications from 1.8 GHz to 2.2 GHz. It features an integrated Doherty circuit with on-chip matching, enabling operation at 20 to 32 V. The device delivers an average output power of 6.3 W and supports various cellular base station modulation formats, making it suitable for modern communication systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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