A3G26H502W17SR3
Manufacturer
NXP
Specification
Specification
RF MOSFET GAN 48V NI780
RF MOSFET GAN 48V NI780
Detailed specification
Detailed specification
RF Mosfet 48 V 370 mA 2.496GHz ~ 2.69GHz 13.1dB 80W NI-780-4S2S
RF Mosfet 48 V 370 mA 2.496GHz ~ 2.69GHz 13.1dB 80W NI-780-4S2S
Description
Description
The A3G26H502W17SR3 is a high-performance RF MOSFET from NXP USA Inc., designed for applications requiring efficient power amplification. This GaN (Gallium Nitride) device operates at a voltage of 48V and can handle a current of 370 mA. It is optimized for frequency ranges between 2.496GHz and 2.69GHz, providing a gain of 13.1dB and a power output capability of 80W. The NI-780-4S2S package ensures reliable thermal management and performance in demanding RF applications, making it suitable for advanced communication systems.
The A3G26H502W17SR3 is a high-performance RF MOSFET from NXP USA Inc., designed for applications requiring efficient power amplification. This GaN (Gallium Nitride) device operates at a voltage of 48V and can handle a current of 370 mA. It is optimized for frequency ranges between 2.496GHz and 2.69GHz, providing a gain of 13.1dB and a power output capability of 80W. The NI-780-4S2S package ensures reliable thermal management and performance in demanding RF applications, making it suitable for advanced communication systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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