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Manufacturers/NXP/A3G26D055NT4

A3G26D055NT4

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
A3G26D055NT4 is used in RF power amplification for cellular base stations, particularly in 5G applications. It is suitable for massive MIMO systems, providing high efficiency and linearity across a wide frequency range, making it ideal for modern telecommunications infrastructure.
Specification
Specification
RF MOSFET GAN 48V 6DFN
RF MOSFET GAN 48V 6DFN
Detailed specification
Detailed specification
RF Mosfet 48 V 40 mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7mm x 6.5mm) (0.28" x 0.26")
RF Mosfet 48 V 40 mA 100MHz ~ 2.69GHz 13.9dB 8W 6-PDFN (7mm x 6.5mm) (0.28" x 0.26")
Description
Description
The A3G26D055NT4 is an RF MOSFET GaN amplifier designed for cellular base station applications. It operates at 48 V with a maximum output power of 8 W, covering a frequency range of 100 MHz to 2.69 GHz. This device features high terminal impedances for optimal broadband performance and is optimized for massive MIMO active antenna systems for 5G. It is characterized for applications requiring wide instantaneous bandwidth and can withstand high output VSWR conditions.
The A3G26D055NT4 is an RF MOSFET GaN amplifier designed for cellular base station applications. It operates at 48 V with a maximum output power of 8 W, covering a frequency range of 100 MHz to 2.69 GHz. This device features high terminal impedances for optimal broadband performance and is optimized for massive MIMO active antenna systems for 5G. It is characterized for applications requiring wide instantaneous bandwidth and can withstand high output VSWR conditions.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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