A3G20S250-01SR3
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET
RF MOSFET
Detailed specification
Detailed specification
RF Mosfet with a maximum width of 10 mm (0.39 inches) and a height of 5 mm (0.20 inches). It features RDS(on) characteristics and is designed with a thick film resistor (tjockfilmsmotstånd) for durability. The device can tolerate a power rating of 20 watts and includes a drum-shaped core (trumformad kärna) for efficient performance. The component is surface-mounted for easy integration into circuits.
RF Mosfet with a maximum width of 10 mm (0.39 inches) and a height of 5 mm (0.20 inches). It features RDS(on) characteristics and is designed with a thick film resistor (tjockfilmsmotstånd) for durability. The device can tolerate a power rating of 20 watts and includes a drum-shaped core (trumformad kärna) for efficient performance. The component is surface-mounted for easy integration into circuits.
Description
Description
The A3G20S250-01SR3 is a 45 W RF power GaN transistor designed for cellular base station applications, operating in the 1800 to 2200 MHz frequency range. It features high terminal impedances for optimal broadband performance and is optimized for Doherty applications, ensuring reliable performance in demanding environments.
The A3G20S250-01SR3 is a 45 W RF power GaN transistor designed for cellular base station applications, operating in the 1800 to 2200 MHz frequency range. It features high terminal impedances for optimal broadband performance and is optimized for Doherty applications, ensuring reliable performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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