A3G18H500-04SR3
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 48V NI780
RF MOSFET LDMOS 48V NI780
Detailed specification
Detailed specification
RF Mosfet 48 V 200 mA 1.805GHz ~ 1.88GHz 15.4dB 107W NI-780S-4L
RF Mosfet 48 V 200 mA 1.805GHz ~ 1.88GHz 15.4dB 107W NI-780S-4L
Description
Description
The A3G18H500-04SR3 is a 107 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications. It operates within a frequency range of 1805 to 2200 MHz, with a typical gain of 15.4 dB and a maximum output power of 107 W. The device features high terminal impedances for optimal broadband performance and can withstand high output VSWR conditions.
The A3G18H500-04SR3 is a 107 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications. It operates within a frequency range of 1805 to 2200 MHz, with a typical gain of 15.4 dB and a maximum output power of 107 W. The device features high terminal impedances for optimal broadband performance and can withstand high output VSWR conditions.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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