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Manufacturers

A3G18D510-04SR3

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
A3G18D510-04SR3 is utilized in cellular base station applications, particularly in RF amplification for 4G and 5G networks. Its design allows for high efficiency and linearity, making it suitable for modern communication systems that require wide bandwidth and robust performance under varying conditions.
Specification
Specification
RF MOSFET GAN 48V NI780
RF MOSFET GAN 48V NI780
Detailed specification
Detailed specification
RF Mosfet 48 V 250 mA 1.805GHz ~ 2.2GHz 16dB 56W NI-780S-4L
RF Mosfet 48 V 250 mA 1.805GHz ~ 2.2GHz 16dB 56W NI-780S-4L
Description
Description
The A3G18D510-04SR3 is a 56 W symmetrical Doherty RF power GaN transistor designed for cellular base station applications. It operates within a frequency range of 1805 to 2200 MHz, providing high efficiency and linearity. With a maximum drain-source voltage of 125 Vdc and a gate-source voltage of -8 Vdc, it supports advanced broadband performance and can withstand high output VSWR conditions.
The A3G18D510-04SR3 is a 56 W symmetrical Doherty RF power GaN transistor designed for cellular base station applications. It operates within a frequency range of 1805 to 2200 MHz, providing high efficiency and linearity. With a maximum drain-source voltage of 125 Vdc and a gate-source voltage of -8 Vdc, it supports advanced broadband performance and can withstand high output VSWR conditions.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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