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A2V07H525-04NR6

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
A2V07H525-04NR6 is used in RF power amplification for cellular base stations, particularly in telecommunications. Its specifications make it ideal for applications requiring high output power and efficiency in the frequency range of 595 to 851 MHz, supporting modern communication standards.
Specification
Specification
RF MOSFET LDMOS 48V OM1230-4
RF MOSFET LDMOS 48V OM1230-4
Detailed specification
Detailed specification
RF Mosfet 48 V 700 mA 595MHz ~ 851MHz 17.5dB 120W OM-1230-4L
RF Mosfet 48 V 700 mA 595MHz ~ 851MHz 17.5dB 120W OM-1230-4L
Description
Description
The A2V07H525-04NR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 48V with a maximum output power of 120W, covering a frequency range of 595 to 851 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, making it suitable for W-CDMA applications with high efficiency and linearity.
The A2V07H525-04NR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 48V with a maximum output power of 120W, covering a frequency range of 595 to 851 MHz. This N-channel enhancement-mode LDMOS transistor features advanced Doherty performance, making it suitable for W-CDMA applications with high efficiency and linearity.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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