A2T27S020NR1
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 28V TO270-2
RF MOSFET LDMOS 28V TO270-2
Detailed specification
Detailed specification
RF Mosfet 28 V 185 mA 400MHz ~ 2.7GHz 21dB 20W TO-270-2
RF Mosfet 28 V 185 mA 400MHz ~ 2.7GHz 21dB 20W TO-270-2
Description
Description
The A2T27S020NR1 is an N-channel enhancement-mode LDMOS RF power transistor designed for cellular base station applications. It operates at 28V with a typical output power of 2.5W across a frequency range of 400MHz to 2.7GHz, achieving a power gain of 21dB and drain efficiency of 20.8%. This device is optimized for digital predistortion systems.
The A2T27S020NR1 is an N-channel enhancement-mode LDMOS RF power transistor designed for cellular base station applications. It operates at 28V with a typical output power of 2.5W across a frequency range of 400MHz to 2.7GHz, achieving a power gain of 21dB and drain efficiency of 20.8%. This device is optimized for digital predistortion systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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