A2T18H100-25SR3
Manufacturer
NXP
Specification
Specification
RF MOSFET LDMOS 28V NI780
RF MOSFET LDMOS 28V NI780
Detailed specification
Detailed specification
RF Mosfet 28 V 230 mA 1.81GHz 18.1dB 18W NI-780-4S4
RF Mosfet 28 V 230 mA 1.81GHz 18.1dB 18W NI-780-4S4
Description
Description
The A2T18H100-25SR3 is an RF MOSFET LDMOS designed for high-performance applications. Operating at a voltage of 28V, it delivers a maximum current of 230 mA and operates efficiently at a frequency of 1.81 GHz. With a power output capability of 18W and a gain of 18.1 dB, this device is ideal for RF amplification in various communication systems. The NI-780-4S4 package ensures reliable thermal performance and ease of integration into compact designs, making it suitable for modern RF applications.
The A2T18H100-25SR3 is an RF MOSFET LDMOS designed for high-performance applications. Operating at a voltage of 28V, it delivers a maximum current of 230 mA and operates efficiently at a frequency of 1.81 GHz. With a power output capability of 18W and a gain of 18.1 dB, this device is ideal for RF amplification in various communication systems. The NI-780-4S4 package ensures reliable thermal performance and ease of integration into compact designs, making it suitable for modern RF applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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