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A2T07D160W04SR3

Manufacturer

NXP

A2T07D160W04SR3 is utilized in RF amplification applications, including wireless communication systems, broadcasting transmitters, and radar systems. Its high efficiency and power handling capabilities make it ideal for use in base stations and other RF transmission equipment.
Specification
Specification
RF MOSFET LDMOS 28V NI780
RF MOSFET LDMOS 28V NI780
Detailed specification
Detailed specification
RF Mosfet 28 V 450 mA 803 MHz 21.5 dB 30 W NI-780S-4L
RF Mosfet 28 V 450 mA 803 MHz 21.5 dB 30 W NI-780S-4L
Description
Description
The A2T07D160W04SR3 is an RF MOSFET designed for high-performance applications, featuring a maximum voltage rating of 28V and a current rating of 450 mA. This LDMOS transistor operates efficiently at a frequency of 803 MHz, providing a gain of 21.5 dB and a power output capability of 30W. The NI-780S-4L package ensures optimal thermal management and reliability in demanding RF environments, making it suitable for various communication and broadcasting applications.
The A2T07D160W04SR3 is an RF MOSFET designed for high-performance applications, featuring a maximum voltage rating of 28V and a current rating of 450 mA. This LDMOS transistor operates efficiently at a frequency of 803 MHz, providing a gain of 21.5 dB and a power output capability of 30W. The NI-780S-4L package ensures optimal thermal management and reliability in demanding RF environments, making it suitable for various communication and broadcasting applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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