A2G35S200-01SR3
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET GAN HEMT 48V NI400
RF MOSFET GAN HEMT 48V NI400
Detailed specification
Detailed specification
RF Mosfet 48 V 291 mA 3.4GHz ~ 3.6GHz 16.1dB 180W NI-400S-2S
RF Mosfet 48 V 291 mA 3.4GHz ~ 3.6GHz 16.1dB 180W NI-400S-2S
Description
Description
The A2G35S200-01SR3 is a 40 W RF power GaN HEMT designed for cellular base station applications, operating in the 3400 to 3600 MHz frequency range. It features a typical output power of 40 W average at VDD = 48 Vdc and IDQ = 291 mA, with a power gain of 16.1 dB and drain efficiency of 35.3%. This device is optimized for digital predistortion error correction systems and Doherty applications.
The A2G35S200-01SR3 is a 40 W RF power GaN HEMT designed for cellular base station applications, operating in the 3400 to 3600 MHz frequency range. It features a typical output power of 40 W average at VDD = 48 Vdc and IDQ = 291 mA, with a power gain of 16.1 dB and drain efficiency of 35.3%. This device is optimized for digital predistortion error correction systems and Doherty applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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