A2G26H281-04SR3
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET GAN 48V NI780
RF MOSFET GAN 48V NI780
Detailed specification
Detailed specification
RF Mosfet 48 V 150 mA 2.496GHz ~ 2.69GHz 14.2dB 50W NI-780S-4L
RF Mosfet 48 V 150 mA 2.496GHz ~ 2.69GHz 14.2dB 50W NI-780S-4L
Description
Description
The A2G26H281-04SR3 is a 50 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications. It operates within a frequency range of 2496 to 2690 MHz, providing high efficiency and performance with a typical power gain of 14.2 dB and drain efficiency of 58.7%. This device is optimized for broadband performance and can withstand high output VSWR conditions.
The A2G26H281-04SR3 is a 50 W asymmetrical Doherty RF power GaN transistor designed for cellular base station applications. It operates within a frequency range of 2496 to 2690 MHz, providing high efficiency and performance with a typical power gain of 14.2 dB and drain efficiency of 58.7%. This device is optimized for broadband performance and can withstand high output VSWR conditions.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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