A2G22S251-01SR3
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
RF MOSFET GAN 48V NI400
RF MOSFET GAN 48V NI400
Detailed specification
Detailed specification
RF Mosfet 48 V 200 mA 1.805GHz ~ 2.2GHz 17.7dB 52dBm NI-400S-2S
RF Mosfet 48 V 200 mA 1.805GHz ~ 2.2GHz 17.7dB 52dBm NI-400S-2S
Description
Description
The A2G22S251-01SR3 is a 48 W RF power GaN transistor designed for cellular base station applications, operating in the frequency range of 1805 to 2200 MHz. It features high terminal impedances for optimal broadband performance and is optimized for Doherty applications, ensuring reliable performance in demanding environments.
The A2G22S251-01SR3 is a 48 W RF power GaN transistor designed for cellular base station applications, operating in the frequency range of 1805 to 2200 MHz. It features high terminal impedances for optimal broadband performance and is optimized for Doherty applications, ensuring reliable performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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