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70T651S10BCI

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
The 70T651S10BCI is designed for high-performance applications in industrial and telecommunications systems, where fast and reliable memory access is critical. Its dual-port architecture allows for simultaneous data processing, making it suitable for multi-processor environments and real-time data handling.
Specification
Specification
IC SRAM 9MBIT PARALLEL 256CABGA
IC SRAM 9MBIT PARALLEL 256CABGA
Detailed specification
Detailed specification
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 256-CABGA (0.67x0.67 in)
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 256-CABGA (0.67x0.67 in)
Description
Description
The Renesas Electronics 70T651S10BCI is a high-speed 9Mbit Dual-Port Asynchronous Static RAM, featuring a 256-CABGA package. It operates at 2.5V with a maximum access time of 10 ns, allowing simultaneous read/write operations from both ports. The device supports LVTTL-compatible I/O levels and includes features like RapidWrite Mode for efficient data handling.
The Renesas Electronics 70T651S10BCI is a high-speed 9Mbit Dual-Port Asynchronous Static RAM, featuring a 256-CABGA package. It operates at 2.5V with a maximum access time of 10 ns, allowing simultaneous read/write operations from both ports. The device supports LVTTL-compatible I/O levels and includes features like RapidWrite Mode for efficient data handling.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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