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70T633S10BFI

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
The IDT70T633/1S is utilized in high-speed systems requiring efficient memory access, such as industrial automation, telecommunications, and embedded systems. Its dual-port architecture allows simultaneous read/write operations, making it ideal for applications involving multiple processors or controllers that demand rapid data exchange and low latency.
Specification
Specification
IC SRAM 9MBIT PARALLEL 208CABGA
IC SRAM 9MBIT PARALLEL 208CABGA
Detailed specification
Detailed specification
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 208-CABGA (15x15 mm) (0.59x0.59 in)
SRAM - Dual Port, Asynchronous Memory IC 9Mbit Parallel 10 ns 208-CABGA (15x15 mm) (0.59x0.59 in)
Description
Description
The IDT70T633/1S is a high-speed 9Mbit Dual-Port SRAM designed for asynchronous operation with a 10 ns access time. It features independent control, address, and I/O pins for simultaneous access, and supports a single 2.5V power supply. The device includes semaphore signaling, sleep mode, and JTAG compliance, making it suitable for high-performance applications in industrial and commercial environments.
The IDT70T633/1S is a high-speed 9Mbit Dual-Port SRAM designed for asynchronous operation with a 10 ns access time. It features independent control, address, and I/O pins for simultaneous access, and supports a single 2.5V power supply. The device includes semaphore signaling, sleep mode, and JTAG compliance, making it suitable for high-performance applications in industrial and commercial environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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