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70T3539MS133BCG

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
The 70T3539MS133BCG is designed for industrial applications requiring high-speed data access and dual-port memory capabilities. Typical applications include telecommunications, networking equipment, and embedded systems where fast and reliable memory access is critical.
Specification
Specification
IC SRAM 18MBIT PAR 256CABGA
IC SRAM 18MBIT PAR 256CABGA
Detailed specification
Detailed specification
SRAM - Dual Port, Synchronous Memory IC 18Mbit Parallel 133 MHz 4.2 ns 256-CABGA (17x17)
SRAM - Dual Port, Synchronous Memory IC 18Mbit Parallel 133 MHz 4.2 ns 256-CABGA (17x17)
Description
Description
The Renesas Electronics 70T3539MS133BCG is a high-speed 18Mbit dual-port synchronous SRAM, featuring a 256-pin CABGA package. It operates at 133 MHz with a maximum access time of 4.2 ns. The device supports a core supply voltage of 2.5V (±100mV) and offers LVTTL compatibility with selectable I/O voltages of 3.3V (±150mV) or 2.5V (±100mV). It includes JTAG functionality, supports industrial temperature ranges (-40°C to +85°C), and features true dual-port memory cells for simultaneous access.
The Renesas Electronics 70T3539MS133BCG is a high-speed 18Mbit dual-port synchronous SRAM, featuring a 256-pin CABGA package. It operates at 133 MHz with a maximum access time of 4.2 ns. The device supports a core supply voltage of 2.5V (±100mV) and offers LVTTL compatibility with selectable I/O voltages of 3.3V (±150mV) or 2.5V (±100mV). It includes JTAG functionality, supports industrial temperature ranges (-40°C to +85°C), and features true dual-port memory cells for simultaneous access.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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