70T3519S200BCG
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
IC SRAM 9MBIT PARALLEL 256CABGA
IC SRAM 9MBIT PARALLEL 256CABGA
Detailed specification
Detailed specification
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 200 MHz 3.4 ns 256-CABGA (17x17 mm (0.67x0.67 in))
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 200 MHz 3.4 ns 256-CABGA (17x17 mm (0.67x0.67 in))
Description
Description
The IDT70T3519S200BCG is a high-speed 9Mbit dual-port synchronous static RAM, featuring a 256K x 36 bit architecture. It operates at 200 MHz with a maximum access time of 3.4 ns. The device supports both 3.3V and 2.5V I/O levels, with a core supply voltage of 2.5V. It includes features such as interrupt and collision detection flags, separate byte controls, and dual cycle deselect for pipelined output mode. The device is housed in a 256-pin CABGA package, suitable for industrial applications.
The IDT70T3519S200BCG is a high-speed 9Mbit dual-port synchronous static RAM, featuring a 256K x 36 bit architecture. It operates at 200 MHz with a maximum access time of 3.4 ns. The device supports both 3.3V and 2.5V I/O levels, with a core supply voltage of 2.5V. It includes features such as interrupt and collision detection flags, separate byte controls, and dual cycle deselect for pipelined output mode. The device is housed in a 256-pin CABGA package, suitable for industrial applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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