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70T3519S200BC

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
IDT70T3519S200BC is utilized in high-performance applications such as telecommunications, industrial automation, and consumer electronics, where dual-port memory access is critical. Its features support data-intensive operations, making it suitable for systems requiring fast data processing and reliable memory management.
Specification
Specification
IC SRAM 9MBIT PARALLEL 256CABGA
IC SRAM 9MBIT PARALLEL 256CABGA
Detailed specification
Detailed specification
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 200 MHz 3.4 ns 256-CABGA (17x17 mm (0.67x0.67 in))
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 200 MHz 3.4 ns 256-CABGA (17x17 mm (0.67x0.67 in))
Description
Description
The IDT70T3519S200BC is a high-speed 9Mbit Dual-Port Synchronous Static RAM, operating at 200 MHz with a 3.4 ns access time. It features a 256-pin CABGA package and supports both 3.3V and 2.5V I/O levels. The device is designed for simultaneous access from both ports, making it ideal for applications requiring high bandwidth and low latency. It includes interrupt and collision detection capabilities, enhancing its functionality in complex memory systems.
The IDT70T3519S200BC is a high-speed 9Mbit Dual-Port Synchronous Static RAM, operating at 200 MHz with a 3.4 ns access time. It features a 256-pin CABGA package and supports both 3.3V and 2.5V I/O levels. The device is designed for simultaneous access from both ports, making it ideal for applications requiring high bandwidth and low latency. It includes interrupt and collision detection capabilities, enhancing its functionality in complex memory systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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