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70T3339S133BFI

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
The 70T3339S133BFI is ideal for industrial applications requiring high-speed data access and dual-port memory capabilities. Typical applications include telecommunications, networking equipment, and embedded systems where fast and efficient memory access is critical.
Specification
Specification
IC SRAM 9MBIT PARALLEL 208CABGA
IC SRAM 9MBIT PARALLEL 208CABGA
Detailed specification
Detailed specification
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 133 MHz 4.2 ns 208-CABGA (15x15 mm (0.59x0.59 in))
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 133 MHz 4.2 ns 208-CABGA (15x15 mm (0.59x0.59 in))
Description
Description
The Renesas Electronics 70T3339S133BFI is a high-speed 9Mbit dual-port synchronous static RAM (SRAM) with a 133 MHz clock frequency and 4.2 ns access time. It features a 208-pin fine pitch Ball Grid Array (fpBGA) package, operates at a core voltage of 2.5V, and supports both 3.3V and 2.5V I/O levels. The device is designed for simultaneous access from both ports, making it suitable for high-performance applications.
The Renesas Electronics 70T3339S133BFI is a high-speed 9Mbit dual-port synchronous static RAM (SRAM) with a 133 MHz clock frequency and 4.2 ns access time. It features a 208-pin fine pitch Ball Grid Array (fpBGA) package, operates at a core voltage of 2.5V, and supports both 3.3V and 2.5V I/O levels. The device is designed for simultaneous access from both ports, making it suitable for high-performance applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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