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70T3339S133BFGI

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
The 70T3339S133BFGI is designed for industrial applications, particularly in high-speed data processing environments such as telecommunications, networking, and embedded systems. Its dual-port architecture enables efficient data handling in systems requiring simultaneous read and write operations, making it suitable for advanced computing and communication systems.
Specification
Specification
IC SRAM 9MBIT PARALLEL 208CABGA
IC SRAM 9MBIT PARALLEL 208CABGA
Detailed specification
Detailed specification
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 133 MHz 4.2 ns 208-CABGA (15x15 mm (0.59x0.59 in))
SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 133 MHz 4.2 ns 208-CABGA (15x15 mm (0.59x0.59 in))
Description
Description
The Renesas Electronics 70T3339S133BFGI is a high-speed 9Mbit dual-port synchronous static RAM, operating at 133 MHz with a 4.2 ns access time. It features a 208-pin fine pitch Ball Grid Array (fpBGA) package, supporting both 3.3V and 2.5V I/O levels. The device allows simultaneous access to the same memory location from both ports, making it ideal for applications requiring high-speed data transfer and low power consumption.
The Renesas Electronics 70T3339S133BFGI is a high-speed 9Mbit dual-port synchronous static RAM, operating at 133 MHz with a 4.2 ns access time. It features a 208-pin fine pitch Ball Grid Array (fpBGA) package, supporting both 3.3V and 2.5V I/O levels. The device allows simultaneous access to the same memory location from both ports, making it ideal for applications requiring high-speed data transfer and low power consumption.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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