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6116LA90DB

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
The Renesas Electronics 6116LA90DB is designed for military, commercial, and industrial applications, particularly in environments requiring high-speed access and low power consumption. Its robust performance and reliability make it suitable for use in telecommunications, consumer electronics, and embedded systems.
Specification
Specification
IC SRAM 16KBIT PARALLEL 24CDIP
IC SRAM 16KBIT PARALLEL 24CDIP
Detailed specification
Detailed specification
SRAM - Asynchronous Memory IC 16Kbit Parallel 90 ns 24-CDIP
SRAM - Asynchronous Memory IC 16Kbit Parallel 90 ns 24-CDIP
Description
Description
The Renesas Electronics 6116LA90DB is a 16Kbit asynchronous SRAM organized as 2K x 8, featuring access times of 90 ns. It operates with a supply voltage of 5.0V ± 10% and supports low-power consumption with a battery backup capability at 2V for data retention. The device is TTL-compatible and requires no clocks or refresh cycles, making it ideal for static operation.
The Renesas Electronics 6116LA90DB is a 16Kbit asynchronous SRAM organized as 2K x 8, featuring access times of 90 ns. It operates with a supply voltage of 5.0V ± 10% and supports low-power consumption with a battery backup capability at 2V for data retention. The device is TTL-compatible and requires no clocks or refresh cycles, making it ideal for static operation.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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