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6116LA120TDB

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
6116LA120TDB is designed for military, commercial, and industrial applications requiring high-speed static RAM. Its low power consumption and battery backup operation make it ideal for systems where reliability and efficiency are critical, such as telecommunications, consumer electronics, and embedded systems.
Specification
Specification
IC SRAM 16KBIT PARALLEL 24CDIP
IC SRAM 16KBIT PARALLEL 24CDIP
Detailed specification
Detailed specification
SRAM - Asynchronous Memory IC 16Kbit Parallel 120 ns 24-CDIP
SRAM - Asynchronous Memory IC 16Kbit Parallel 120 ns 24-CDIP
Description
Description
The Renesas Electronics 6116LA120TDB is a 16Kbit asynchronous SRAM memory IC, organized as 2K x 8, with a maximum access time of 120 ns. It operates with a supply voltage of 5.0V ± 10% and features low power consumption, battery backup capability, and TTL-compatible I/O. The device is available in a 24-pin CDIP package, suitable for various applications requiring high-speed static memory.
The Renesas Electronics 6116LA120TDB is a 16Kbit asynchronous SRAM memory IC, organized as 2K x 8, with a maximum access time of 120 ns. It operates with a supply voltage of 5.0V ± 10% and features low power consumption, battery backup capability, and TTL-compatible I/O. The device is available in a 24-pin CDIP package, suitable for various applications requiring high-speed static memory.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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