55GN01CA-TB-E
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
RF TRANS NPN 10V 4.5GHZ 3CP
RF TRANS NPN 10V 4.5GHZ 3CP
Detailed specification
Detailed specification
RF Transistor NPN 10V 70mA 4.5GHz 200mW surface-mounted 3-CP
RF Transistor NPN 10V 70mA 4.5GHz 200mW surface-mounted 3-CP
Description
Description
The 55GN01CA-TB-E is an NPN RF transistor designed for high-frequency applications, featuring a maximum collector-to-emitter voltage of 10V and a collector current of 70mA. It operates at a cutoff frequency of 5.5GHz and provides a typical gain of 9.5dB at 1GHz. This surface-mounted device is suitable for various RF applications.
The 55GN01CA-TB-E is an NPN RF transistor designed for high-frequency applications, featuring a maximum collector-to-emitter voltage of 10V and a collector current of 70mA. It operates at a cutoff frequency of 5.5GHz and provides a typical gain of 9.5dB at 1GHz. This surface-mounted device is suitable for various RF applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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