4N37M
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Description
Description
The 4N37M is a general-purpose optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers a high isolation voltage of 4170 Vrms and a current transfer ratio of 100% at IF = 10 mA, VCE = 10 V. Packaged in a 6-pin DIP, it is suitable for various applications requiring electrical isolation.
The 4N37M is a general-purpose optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers a high isolation voltage of 4170 Vrms and a current transfer ratio of 100% at IF = 10 mA, VCE = 10 V. Packaged in a 6-pin DIP, it is suitable for various applications requiring electrical isolation.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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