4N35TVM
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
OPTOISO 4.17KV TRANS W/BASE 6DIP
OPTOISO 4.17KV TRANS W/BASE 6DIP
Detailed specification
Detailed specification
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Optoisolator Transistor with Base Output 4170Vrms 1 Channel 6-DIP
Description
Description
The 4N35TVM from onsemi is a high-performance optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers an isolation voltage of 4170 Vrms and is housed in a 6-pin DIP package. This device is designed for applications requiring electrical isolation and signal transmission, ensuring reliable operation in various environments.
The 4N35TVM from onsemi is a high-performance optoisolator featuring a gallium arsenide infrared emitting diode driving a silicon phototransistor. It offers an isolation voltage of 4170 Vrms and is housed in a 6-pin DIP package. This device is designed for applications requiring electrical isolation and signal transmission, ensuring reliable operation in various environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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